?2001 fairchild semiconductor corporation HGTG30N60C3, hgt4e30n60c3s rev. b1 HGTG30N60C3, hgt4e30n60c3s 63a, 600v, ufs series n-channel igbt the HGTG30N60C3 and hgt4e30n60c3s are mos gated high voltage switching devices combining the best features of mosfets and bipolar transistors. these devices have the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on- state voltage drop varies only moderately between 25 o cand 150 o c. these igbts are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. formerly developmental type ta49051. symbol features ? 63a,600vatt c =25 o c 600v switching soa capability typicalfalltime ............... 230ns at t j =150 o c short circuit rating low conduction loss packaging jedec style to-247 to-268aa ordering information part number package brand HGTG30N60C3 to-247 g30n60c3 hgt4e30n60c3s to-268 g30n60c3s note: when ordering, use the entire part number. c e g e c g e c g fairchild corporation igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet december 2001
?2001 fairchild semiconductor corporation HGTG30N60C3, hgt4e30n60c3s rev. b1 absolute maximum ratings t c =25 o c, unless otherwise specified HGTG30N60C3, hgt4e30n60c3s units collector to emitter voltagebv ces 600 v collector current continuous at t c =25 o ci c25 63 a at t c =110 o ci c110 30 a collector current pulsed (note 1)i cm 252 a gate to emitter voltage continuousv ges 20 v gate to emitter voltage pulsedv gem 30 v switching safe operating area at t j =150 o c (figure 14)ssoa 60a at 600v power dissipation total at t c =25 o cp d 208 w power dissipation derating t c >25 o c1.67w/ o c reverse voltage avalanche energye arv 100 mj operating and storage junction temperature ranget j ,t stg -40to150 o c maximum lead temperature for solderingt l 260 o c short circuit withstand time (note 2) at v ge =15vt sc 4 s short circuit withstand time (note 2) at v ge =10vt sc 15 s caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress only rating and operatio nofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. v ce(pk) =360v,t j =125 o c, r g =25 ?. electrical specifications t c =25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c =250 a, v ge =0v 600 - - v emitter to collector breakdown voltage bv ecs i c =10ma,v ge =0v 15 25 - v collector to emitter leakage current i ces v ce =bv ces t c =25 o c--250 a v ce =bv ces t c =150 o c--2.0ma collectorto emitter saturation voltage v ce(sat) i c =i c110 ,v ge =15v t c =25 o c-1.51.8v t c =150 o c-1.72.0v gate to emitter threshold voltage v ge(th) i c =250 a, v ce =v ge t c =25 o c3.05.26.0v gate to emitter leakage current i ges v ge = 20v - - 100 na switching soa ssoa t j =150 o c, r g =3 ?, v ge =15v, l=100 h v ce(pk) =480v 200 - - a v ce(pk) =600v 60 - - a gate to emitter plateau voltage v gep i c =i c110 ,v ce =0.5bv ces -8.1- v on-state gate charge q g(on) i c =i c110 , v ce =0.5bv ces v ge = 15v - 162 180 nc v ge = 20v - 216 250 nc current turn-on delay time t d(on)i t j =150 o c, i ce =i c110, v ce(pk) =0.8bv ces, v ge =15v, r g =3 ?, l=100 h -40- ns current rise time t ri -45- ns current turn-off delay time t d(off)i - 320 400 ns current fall time t fi - 230 275 ns turn-on energy e on -1050- j turn-off energy (note 3) e off -2500- j thermal resistance r jc --0.6 o c/w note: 3. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). the HGTG30N60C3 was tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. turn-on losses include diode losses. HGTG30N60C3, hgt4e30n60c3s
?2001 fairchild semiconductor corporation HGTG30N60C3, hgt4e30n60c3s rev. b1 typical performance curves figure 1. transfer characteristics figure 2. saturation characteristics figure 3. collector to emitter on-state voltage figure 4. collector to emitter on-state voltage figure 5. maximum dc collector current vs case temperature figure 6. short circuit withstand time i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) t c =25 o c t c =-40 o c t c = 150 o c 46 81012 0 25 50 75 100 125 150 pulse duration = 250 s duty cycle <0.5%, v ce = 10v i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) pulse duration = 250 s, duty cycle <0.5%, t c =25 o c 0 0246810 10.0v 9.5v 9.0v 8.5v 25 50 75 100 125 150 7.5v 8.0v 12.0v v ge = 15.0v 7.0v i ce , collector to emitter current (a) 0 25 50 01 2 3 45 75 100 125 150 pulse duration = 250 s duty cycle <0.5%, v ge =10v t c =-40 o c t c =25 o c t c =150 o c v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 25 50 75 125 150 012 345 v ce , collector to emitter voltage (v) 100 pulse duration = 250 s duty cycle <0.5% v ge =15v t c =150 o c t c =25 o c t c =-40 o c 25 50 75 100 125 150 0 10 20 30 40 50 60 70 i ce , dc collector current (a) t c , case temperature ( o c) v ge =15v i sc , peak short circuit current (a) 100 250 300 350 450 t sc , short circuit withstand time ( s) 10 11 12 v ge , gate to emitter voltage (v) 14 15 13 500 400 200 150 i sc t sc 5 10 15 20 25 v ce =360v,r g =25 ? ,t j =125 o c HGTG30N60C3, hgt4e30n60c3s
?2001 fairchild semiconductor corporation HGTG30N60C3, hgt4e30n60c3s rev. b1 figure 7. turn-on delay time vs collector to emitter current figure 8. turn-off delay time vs collector to emitter current figure 9. turn-on rise time vs collector to emitter current figure 10. turn-off fall time vs collector to emitter current figure 11. turn-on energy loss vs collector to emitter current figure 12. turn-off energy loss vs collector to emitter current typical performance curves (continued) t d(on)i , turn-on delay time (ns) 10 20 50 30 40 10 20 30 40 i ce , collector to emitter current (a) 100 v ge =15v 50 60 200 t j =150 o c, r g =3 ? , l = 100 h, v ce(pk) = 480v v ge = 10v i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 500 400 300 200 100 10 20 30 40 50 60 t j = 150 o c, r g =3 ? , l = 100 h, v ce(pk) = 480v v ge = 15v v ge = 10v i ce , collector to emitter current (a) t ri , turn-on rise time (ns) 10 100 500 10 20 30 40 50 60 t j = 150 o c, r g =3 ? , l = 100 h, v ce(pk) = 480v v ge =15v v ge =10v i ce , collector to emitter current (a) t fi ,falltime(ns) 100 10 20 30 40 50 60 200 300 400 500 t j = 150 o c, r g =3 ? , l = 100 h, v ce(pk) =480v v ge =15v v ge = 10v i ce , collector to emitter current (a) 0 10 20 30 40 e on , turn-on energy loss (mj) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 50 60 t j =150 o c, r g =3 ? , l = 100 h, v ce(pk) = 480v v ge =10v v ge =15v i ce , collector to emitter current (a) e off , turn-off energy loss (mj) 10 20 30 40 50 60 1.0 2.0 3.0 4.0 5.0 6.0 0 t j = 150 o c, r g =3 ? , l = 100 h, v ce(pk) =480v v ge = 10v or 15v HGTG30N60C3, hgt4e30n60c3s
?2001 fairchild semiconductor corporation HGTG30N60C3, hgt4e30n60c3s rev. b1 figure 13. operating frequency vs collector to emitter current figure 14. switching safe operating area figure 15. capacitance vs collector to emitter voltage figure 16. gate charge waveforms figure 17. igbt normalized transient thermal impedance, junction to case typical performance curves (continued) i ce , collector to emitter current (a) f max , operating frequency (khz) 510203040 10 100 500 t j = 150 o c, t c =75 o c f max2 =(p d -p c )/(e on +e off ) p d = allowable dissipation p c = conduction dissipation f max1 =0.05/(t d(off)i +t d(on)i ) (duty factor = 50%) r jc =0.6 o c/w v ge =15v v ge =10v 1 60 r g =3 ? ,l=100 h v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 100 200 300 400 500 600 0 50 100 150 200 250 limited by circuit t j =150 o c, v ge = 15v, l = 100 h v ce , collector to emitter voltage (v) 0 5 10 15 20 25 0 1000 2000 3000 4000 5000 6000 7000 8000 c, capacitance (pf) frequency = 400khz c ies c oes c res v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) q g , gate charge (nc) i g(ref) = 3.54ma, r l =20 ? ,t c =25 o c 0 240 120 360 480 600 15 12 9 6 3 v ce = 400v v ce = 200v v ce = 600v 0 0 40 80 120 160 200 t 1 , rectangular pulse duration (s) 10 -5 10 -3 10 0 10 1 10 -4 t 1 t 2 p d duty factor, d = t 1 /t 2 peak t j =(p d xz jc xr jc )+t c 10 -1 10 -2 single pulse 10 0 z jc , normalized thermal response 10 -1 10 -2 0.5 0.2 0.1 0.05 0.02 0.01 HGTG30N60C3, hgt4e30n60c3s
?2001 fairchild semiconductor corporation HGTG30N60C3, hgt4e30n60c3s rev. b1 handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler?s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?eccosorbd ? ld26? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open- circuited or floating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 13) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 4, 7, 8, 11 and 12. the operating frequency plot (figure 13) of a typical device shows f max1 or f max2 , whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i +t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 19. device turnoff delay can establish an additional frequency limiting condition for an application other than t jm .t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 =(p d -p c )/(e off +e on ). the allowable dissipation (p d ) is defined by p d =(t jm -t c )/r jc .the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 13) and the conduction losses (p c )are approximated by p c =(v ce xi ce )/2. e on and e off are defined in the switching waveforms showninfigure19.e on is the integral of the instantaneous power loss (i ce xv ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e. the collector current equals zero (i ce =0). test circuit and waveforms figure 18. inductive switching test circuit figure 19. switching test waveforms r g =3 ? l = 100 h v dd = 480v + - rhrp3060 t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on HGTG30N60C3, hgt4e30n60c3s
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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